Thursday, 6 June 2013

Video Solutions for GATE 2006 ECE : Two Mark Questions (Electron Devices)

1.  In the circuit shown below, the switch was connected to 

     position 1 at t < 0 and at t = 0, it is changed to position 2.  

    Assume that the diode has zero voltage drop and a storage 

    time tS. For 0 < t < tS, VR is given in volts is 

2. The majority carriers in an n-type semiconductor have an 

    average drift velocity V in a direction perpendicular to a uniform 

    magnetic field B. the electric field E induced due to hall effect 

    acts in the direction

3.  Find the correct match between group 1 and group 2 :

4. A heavily doped n-type semiconductor has the following data 

                Hole – electron mobility ratio      :  0.4
                Doping concentration                    :  4.2 x 108 /m3
                Intrinsic concentration                   :  1.5  x 104 /m3

The ratio of conductance of the n-type semiconductor to that of the

 intrinsic semiconductor of same material and at the same 

 temperature is given by


5.  For the circuit shown below, assume the zener diode is ideal   

     with  a breakdown voltage of 6 volts. The waveform observed 

     across R is 

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