1. The values of voltage (VD) across a tunnel diode
corresponding
to peak and valley currents are VP and VV
respectively. The
range of tunnel diode voltage VD for which the
slope of its I-V
characteristics is negative would be
2. The concentration of minority carriers in an extrinsic
semiconductor under equilibrium is :
3. Under low level injection assumption, the injected minority
carrier current for an extrinsic semiconductor is essentially the
4. The phenomenon known as “early effect” in a bipolar
transistor
refers to a reduction of the effective base width caused by
5. An n-channel depletion MOSFET has following two points on
its ID verses VGS curve are
(i)
VGS = 0 at ID = 12 mA and
(ii)
VGS = -6 volts at ID
= 0 mA
transconductance gain for small signals ?
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