1. A silicon sample A is doped with 1018 atoms / cm3
of boron.
Another sample B of identical dimensions is doped with 1018
atoms /cm3 of phosphorous. The ratio of electron to hole
mobility is
3. The ratio of conductivity of the sample A to B is
2. A silicon PN junction diode under reverse bias has depletion
region of width 10µm. the relative permittivity of silicon Ɛr
is
11.7 and the permittivity of free space Ɛo = 8.85x10-12
F/m. the
depletion capacitance of the diode per square meter is
3. For an npn transistor connected as shown in figure,
VBE
= 0.7 volts. Given that reverse saturation current of the
junction at room
temperature 300oK is 10-13 Amp, the emitter
current is
4. For an n-channel MOSFET and its transfer curve shown in
5. The zener diode in the regulator circuit shown in figure has
a
zener voltage of 5.8 volts and a zener knee current of 0.5 mA.
The maximum load
current drawn from this circuit ensuring
proper functioning over the input
voltage range between 20
and 30 volts is
6. Both transistors T1 and T2 in figure
have a threshold voltage of
1 volt. The device parameters k1 and k2
of T1 and T2 are ,
36 µA/V2 and 9 µA/V2
, respectively. The output voltage Vo is
7. A MOS capacitor made using p type substrate is in the
accumulation mode. The dominant charge in the channel
is due to the presence of
No comments:
Post a Comment