Thursday, 6 June 2013

Video Solutions for GATE 2003 ECE : One Mark Questions (Electron Devices)

1. n-type silicon is obtained by doping silicon with 

 (A) germanium            (B) aluminum        

(C) boron                     (D) phosphorous

2. The band gap of silicon at 300oK is 

              (A)  1.36 eV             (B)  1.10 eV          
              (C)  0.80 eV             (D)  0.67 eV

3. The intrinsic carrier concentration of silicon sample of 300oK is

    1.5 x 1016 /m3. If after doping, the number of majority carriers is 

    5 x 1020 /m3, the minority carrier density is 


4. Choose proper substitutes for X and Y to make the following 

    statement correct. Tunnel diode and Avalanche photo diode are 

    operated in X bias and Y bias respectively.


5. For an n-channel enhancement type MOSFET, if the source is 

    connected at a higher potential than that of the bulk

    (i.e. VSB > 0 volts), the threshold voltage VT of the MOSFET will

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