1. n-type silicon is obtained by doping silicon with
(A) germanium (B) aluminum
(C) boron (D) phosphorous
2. The band gap of silicon at 300oK is
(A) 1.36 eV (B) 1.10 eV
(C) 0.80 eV (D) 0.67 eV
3. The intrinsic carrier concentration of silicon sample of 300oK
is
1.5 x 1016 /m3. If after doping, the number of
majority carriers is
5 x 1020 /m3, the minority carrier
density is
4. Choose proper substitutes for X and Y to make the following
statement correct. Tunnel diode and Avalanche photo diode are
operated in X bias
and Y bias respectively.
5. For an n-channel enhancement type MOSFET, if the source is
connected at a higher potential than that of the bulk
(i.e. VSB >
0 volts), the threshold voltage VT of the MOSFET will
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