Video Solutions for GATE 2003 ECE : One Mark Questions (Electron Devices)

1. n-type silicon is obtained by doping silicon with 

 (A) germanium            (B) aluminum        

(C) boron                     (D) phosphorous

2. The band gap of silicon at 300^oK is 

              (A)  1.36 eV             (B)  1.10 eV          

   

              (C)  0.80 eV             (D)  0.67 eV

3. The intrinsic carrier concentration of silicon sample of 300^oK is

    1.5 x 10¹⁶ /m³. If after doping, the number of majority carriers is 

    5 x 10²⁰ /m³, the minority carrier density is 

 

4. Choose proper substitutes for X and Y to make the following 

    statement correct. Tunnel diode and Avalanche photo diode are 

    operated in X bias and Y bias respectively.

 

5. For an n-channel enhancement type MOSFET, if the source is 

    connected at a higher potential than that of the bulk

    (i.e. V_SB > 0 volts), the threshold voltage V_T of the MOSFET will