1. The impurity commonly used for realizing the base region of
a silicon n-p-n transistor is
(A) Gallium
(B) Indium
(C) Boron (D) Phosphorus
2. If for a silicon n-p-n transistor, the base to emitter
voltage (VBE)
is 0.7 volts and the collector to base voltage (VCB)
is 0.2 volts,
then the transistor is operating in the
(A) Normal
active mode (B) saturation
mode
(C) Inverse
active mode (D) cutoff
mode
3. Consider the following statements S1 and S2.
S1: the
β
of a bipolar transistor reduces if the base width
is increased.
S2: the
β
of a bipolar transistor increases if the doping
concentration in the base is
increased
Which one of the following is correct ?
4. Assuming VCEsat = 0.2 volts, and β =
50, the minimum base
current (IB) required to drive the transistor
in figure to saturation
is
5. The given figure is the voltage transfer characteristic of
Ans : CMOS Inverter

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