Video Solutions for GATE 2004 EC : One Mark Questions (Electron Devices)

1. The impurity commonly used for realizing the base region of 

     a silicon n-p-n transistor is 

                           (A)   Gallium             (B)    Indium          

                   (C)     Boron             (D)      Phosphorus

2. If for a silicon n-p-n transistor, the base to emitter voltage (V_BE) 

    is 0.7 volts and the collector to base voltage (V_CB) is 0.2 volts, 

    then the transistor is operating in the 

        (A)   Normal active mode                         (B)  saturation mode

        (C)    Inverse active mode                        (D)  cutoff mode

3. Consider the following statements S1 and S2.

                S1: the β of a bipolar transistor reduces if the base width 

                       is increased.

                S2: the β of a bipolar transistor increases if the doping 

                       concentration in the base is increased

  Which one of the following is correct ?

4. Assuming V_CEsat = 0.2 volts, and β = 50, the minimum base 

    current (I_B) required to drive the transistor in figure to saturation

    is 

 

5. The given figure is the voltage transfer characteristic of 

Ans :  CMOS Inverter