Video Solutions for GATE 1998 ECE : One Mark Questions ( Electron Devices )

1. The electron and hole concentrations in a intrinsic 

     semiconductor are n_i and p_i respectively. When doped with 

     a p-type material, these change to n and p, respectively. Then 

 

2. The static characteristic of an adequately forward biased 

    PN junction is a straight line, if the plot is of 

3. A long specimen of p-type semiconductor material 

              (a)  Is positively charged                       

  

              (b)  Is electrically neutral

              (c)  Has an electric field directed along its length 

              (d)  Acts as a dipole

 

4. Two identical FETs, each characterized by the parameters g_m 

    and r_d are connected in parallel. The composite FET is then 

    characterized by the parameters

 

5. The units of  (q / KT) are