1. The electron and hole concentrations in a intrinsic
semiconductor are ni and pi respectively. When doped with
a p-type material, these change to n and p, respectively. Then
2. The static characteristic of an adequately forward biased
PN
junction is a straight line, if the plot is of
3. A long specimen of p-type semiconductor material
(a) Is
positively charged
(b) Is
electrically neutral
(c) Has an
electric field directed along its length
(d) Acts
as a dipole
4. Two identical FETs, each characterized by the parameters gm
and rd are connected in parallel. The composite FET is then
characterized by the parameters
5. The units of (q / KT) are
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