Tuesday, 11 June 2013

Video Solutions for GATE 1998 ECE : One Mark Questions ( Electron Devices )

1. The electron and hole concentrations in a intrinsic 

     semiconductor are ni and pi respectively. When doped with 

     a p-type material, these change to n and p, respectively. Then 


2. The static characteristic of an adequately forward biased 

    PN junction is a straight line, if the plot is of 

3. A long specimen of p-type semiconductor material 

              (a)  Is positively charged                       
              (b)  Is electrically neutral

              (c)  Has an electric field directed along its length 

              (d)  Acts as a dipole

4. Two identical FETs, each characterized by the parameters gm 

    and rd are connected in parallel. The composite FET is then 

    characterized by the parameters


5. The units of  (q / KT) are 


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