1. In a bipolar transistor at room temperature, if the emitter current
is doubled, then the voltage across its base emitter junction
2. A silicon N channel MOSFET has a threshold voltage of 1 volt,
and oxide thickness of Ao.
[ Ɛr (SiO2) = 3.9, Ɛo = 8.854 x 10-14 F/cm, q = 1.6 x 10-19]
The region under the gate is ion implanted for threshold voltage
tailoring. The doping and type of the implant (assumed to be
a sheet charge at the interface) required to shift the threshold
voltage to -1 volt are
3. A zener diode in the circuit shown has a knee current of 5 mA,
and a maximum allowed power dissipation of 300 mW. What are
the minimum and maximum load currents that can be drawn
safely from the circuit, keeping the output voltage Vo constant
at 6 volts ?