Tuesday, 11 June 2013

Video Solutions for GATE 1996 ECE : Two Mark Questions ( Electron Devices )

1. In a bipolar transistor at room temperature, if the emitter current

    is doubled, then the voltage across its base emitter junction

2. A silicon N channel MOSFET has a threshold voltage of 1 volt, 

    and oxide thickness of   Ao.

    [ Ɛr (SiO2) = 3.9, Ɛo = 8.854 x 10-14 F/cm, q = 1.6 x 10-19]

    The region under the gate is ion implanted for threshold voltage

    tailoring. The doping and type of the implant (assumed to be

    a sheet charge at the interface) required to shift the threshold 

     voltage to -1 volt are

3. A zener diode in the circuit shown has a knee current of 5 mA, 

    and a maximum allowed power dissipation of 300 mW. What are

    the minimum and maximum load currents that can be drawn 

    safely from the circuit, keeping the output voltage Vo constant 

    at 6 volts ? 

No comments:

Post a Comment

Download Android App for FREE