1. The n MOSFET shown in figure is used as a voltage variable
resistor.
Determine the expression for the resistance and
compute its value for
Vi.
Neglect body effect.
MOSFET
data :
Threshold
data, VT = 1 volt
Channel length modulation parameter, λ = -0.3 V-1
Transconductance parameter, Kn(W/L) = 40 µA/V2

2. A JFET with VP = -4 volts and IDSS =
12 mA is used in the
circuit shown. Assuming the device to be operating in
saturation.
(a) Determine
ID, VDS and VGS.
(b) Check to confirm that the device is
indeed operating
in saturation.

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