Video Solutions for GATE 1996 ECE : Five Mark Questions ( Electron Devices )

1. The n MOSFET shown in figure is used as a voltage variable 

    resistor.  

 

    Determine the expression for the resistance and 

    compute its value for V_i.

    Neglect body effect.

    MOSFET data :

    Threshold data, V_T = 1 volt

    Channel length modulation parameter, λ = -0.3 V^-1

    Transconductance parameter, K_n(W/L) = 40 µA/V²

 

2. A JFET with V_P = -4 volts and I_DSS = 12 mA is used in the 

    circuit shown. Assuming the device to be operating in saturation.

               (a)  Determine I_D, V_DS and V_GS.

       (b)  Check to confirm that the device is indeed operating 

              in saturation.