1. The n MOSFET shown in figure is used as a voltage variable
Determine the expression for the resistance and
compute its value for Vi.
Neglect body effect.
MOSFET data :
Threshold data, VT = 1 volt
Channel length modulation parameter, λ = -0.3 V-1
Transconductance parameter, Kn(W/L) = 40 µA/V2
2. A JFET with VP = -4 volts and IDSS = 12 mA is used in the
circuit shown. Assuming the device to be operating in saturation.
(a) Determine ID, VDS and VGS.
(b) Check to confirm that the device is indeed operating