Tuesday, 11 June 2013

Video Solutions for GATE 1996 ECE : Five Mark Questions ( Electron Devices )




1. The n MOSFET shown in figure is used as a voltage variable 
    resistor.  
 
    Determine the expression for the resistance and 
    compute its value for Vi.
    Neglect body effect.
    MOSFET data :
    Threshold data, VT = 1 volt
    Channel length modulation parameter, λ = -0.3 V-1
    Transconductance parameter, Kn(W/L) = 40 µA/V2
 







2. A JFET with VP = -4 volts and IDSS = 12 mA is used in the 

    circuit shown. Assuming the device to be operating in saturation.


               (a)  Determine ID, VDS and VGS.

       (b)  Check to confirm that the device is indeed operating 
              in saturation.
 

 



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