1. The drift velocity of electrons, in silicon

2. The diffusion potential across a PN junction

3. The breakdown voltage of a transistor with its base open
is
BVCEO , that with emitter open is BVCBO then
(a) BVCEO = BVCBO (b) BVCEO >
BVCBO
(c) BVCEO < BVCBO (d) BVCEO not related to BVCBO

4. In a P-type silicon sample, the hole concentration
is
2.25x1015 /cm3. If the intrinsic carrier concentration
is
1.5x1010 /cm3, the electron concentration is
(a) Zero (b) 1010 /cm3
(c) 105 /cm3 (d) 1.5x1010
/cm3

5. A zener diode works on the principle of

6. A BJT is said to be operating in the saturation region if
(a) Both
the junctions are reverse biased
(b) Base emitter junction is reverse
biased and base collector
junction is forward biased
(c) Base emitter junction is forward
biased and base collector
junction reverse biased
(d) Both the junctions are forward
biased

7. The depletion capacitance, CJ, of an abrupt PN
junction with
constant doping on either side varies with reverse bias, VR
as

8. The Ebers-Moll model
is applicable to

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