1. A small concentration of minority carriers is injected into
a
homogeneous semiconductor crystal at one point. An electric
field of 10 V-cm
is applied across the crystal and this moves
the minority carriers a distance
of 1 cm is 20 µsec. The mobility
in cm2/volt-sec will be
(a) 1,000 (b) 2,000
(c) 5,000 (d) 5,00,000
2. The threshold voltage of an n channel MOSFET can be
increased by

Fill in the Blanks :
1. The forward dynamic resistance of a junction diode varies
__________________ as the forward
current.
2. The transit time of
the current carriers through the channel of
an FET decides its _________
characteristics.
Ans : Switching
TRUE ( or ) FALSE :
1. A p-type silicon sample has a higher conductivity compared
to an n-type sample having the same dopant concentration.
(TRUE / FALSE)
Ans : FALSE
2. Channel current is reduced on application of a more positive
voltage to the gate of a depletion mode n-channel MOSFET.
(TRUE / FALSE)
Ans : FALSE
Match the Following :
1. Match the Following w.r.t. BJT.
Ans :
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