Monday, 11 March 2013

Video Solutions for GATE 2013 Electronics & Communications (EC) - Electronic Devices - One Mark Questions


GATE  2013 (EC) - Electronic Devices

ONE  MARK  Questions 

  1. In IC Technology, Dry oxidation ( using Dry oxidation ) as compared to Wet oxidation ( using stream or water vapor ) produces ……………..
    1. superior quality oxide with a higher growth rate
    2. inferior quality oxide with a higher growth rate
    3. inferior quality oxide with a lower growth rate
    4. superior quality oxide with a lower growth rate
Answer : D    
                                                                                           




  1. In a Forward Biased PN junction diode, the sequence of events that best describes the mechanism of current flow is
    1. Injection and subsequent diffusion and recombination of minority carriers
    2. Injection and subsequent drift and generation of minority carriers
    3. Extraction and subsequent diffusion and generation of minority carriers
    4. Extraction and subsequent drift and recombination of minority carriers
Answer : A

                                      


  1. In a MOSFET operating in saturation region, the channel length modulation effect causes,
    1. an increase in gate source capacitance
    2. a decrease in transconductance
    3. a decrease in unity gain bandwidth product
    4. a decrease in output resistance      
 Answer : D
                                      



4 comments:

  1. thanks for these videos. It is really useful. i hv a doubt in the first question.there u hv mentioned both wet & dry oxidation are used to form thin oxides. but u refer dry oxidation formation as gate oxide and for wet oxidation as field oxide. whether both are same or not?

    ReplyDelete
  2. actually dry oxidation is a slow process w.r.t wet one but it give superior electrical quality ....

    ReplyDelete
  3. actually dry oxidation is a slow process w.r.t wet one but it give superior electrical quality ....

    ReplyDelete

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