Wednesday, 13 March 2013

Video Solutions for GATE 2010 EC : Electronic Devices - One Mark Questions


1. At room temperature, a possible value for the mobility of electronics in the inversion layer of a silicon n-channel MOSFET is

Ans :  B





2. Thin gate oxide in a CMOS process in preferably grown using


Ans :  B

No comments:

Post a Comment

Download Android App for FREE

https://play.google.com/store/apps/details?id=com.vini.gate.ece.edc