Online GATE Coaching for FREE (ECE)
Pages
IES (E & T)
GATE - ECE
GATE MCQs
GATE 2015
GATE 2014 Papers with Key
Yearwise GATE Solutions
Topic wise GATE solutions
Android App's for GATE ECE
Wednesday, 13 March 2013
Video Solutions for GATE 2010 EC : Electronic Devices - One Mark Questions
1. At room temperature, a possible value for the mobility of electronics in the inversion layer of a silicon n-channel MOSFET is
Ans :
B
2. Thin gate oxide in a CMOS process in preferably grown using
Ans :
B
No comments:
Post a comment
Newer Post
Older Post
Home
Subscribe to:
Post Comments (Atom)
No comments:
Post a comment